Phenomenological survey on the potential profile evolution in III-V binary compounds
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Quadratic eigenvalue problem
dispersing potential profile Problema cuadrático de autovalores
perfil del potencial dispersor

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Mendoza Álvarez, A., Fernández Anaya, G., Flores-Godoy, J. J., & Diago-Cisneros, L. (2014). Phenomenological survey on the potential profile evolution in III-V binary compounds. Nova Scientia, 3(6), 47–67.


In this paper we present the change in the effective potential profile of some compounds when the bandmixing of light and heavy holes is altered. We obtained this by applying Generalized Shur's Theorem to an eigenvalue quadratic problem obtained from a system with N second order coupled equations in the context of multiband effective mass approximation. We considered incident energy values that were lower, equal, and higher than the height of the dispersive Mendoza, A. et al. Revista Electrónica Nova Scientia, Nº 6 Vol. 3 (2), 2011. ISSN 2007 - 0705. pp: 47 - 67 - 49 - potential barrier for different III-V semiconductor binary compounds. Most of the standard properties of the binary compounds in this study were guaranteed; but not all of the materials we chose, have shown the evolution we expected in their effective potential profile: some of the ones that constitute quantum wells (QW) in technological applications only evolve into effective barrier (B) behaviors for light holes (lh) when they are in different incident energy (E) ranges and present different bandmixing. None of the barrier constituting compounds for technological applications in this study evolves into effective QW behaviors valid for both lh and hh. Surprisingly enough, all of the compounds in this study that constitute standard barriers in technological applications, present transitions from QW to B for lh in the range where the value of E is higher than the height of the barrier.
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